Перегляд за автором "Poroshin, V.N."

Сортувати за: Порядок: Результатів:

  • Anisotropy and non-linearity of absorption of an intensive IR light by free electrons in germanium 
    Vasetskii, V.M.; Ignatenko, V.A.; Poroshin, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The anisotropy and non-linearity of absorption of the intensive CO₂ laser radiation by free electrons in germanium has been found. The effect is caused by redistribution of electrons among equivalent valleys occurring due ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Stress-induced effects in light scattering by plasmons in p-type germanium 
    Poroshin, V.N.; Gaydar, A.V.; Abramov, A.A.; Tulupenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal ...
  • The role of optical phonons in electrons heating by IR radiation in Ge 
    Poroshin, V.N.; Sarbey, O.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration ...